1 dual igbtmod nf-series module 150 amperes/600 volts CM150DY-12NF po werex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram description: po w erex igbtmod modules are designed for use in switching applications. each module consists of two igbt transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. all components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery f ree-wheel diode isolated baseplate for easy heat sinking applications: ac motor control ups battery powered supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM150DY-12NF is a 600v (v ces ), 150 ampere dual igbtmod po w er module. t ype current rating v ces amperes volts (x 50) cm 150 12 a e e f f b n l (2 places) d m nuts (3 places) j g g h k k k ppp t thick u width q q v c s r g2 e2 e1 g1 c1 e2 c2e1 t c measured point (baseplate) label c2e1 e2 c1 g2 e2 e1 g1 dimensions inches millimeters a 3.70 94.0 b 1.89 48.0 c 1.14+0.04/-0.02 29.0+1.0/-0.5 d 3.15 0.01 80.0 0.25 e 0.67 17.0 f 0.91 23.0 g 0.16 4.0 h 0.71 18.0 j 0.51 13.0 k 0.47 12.0 dimensions inches millimeters l 0.26 dia. dia. 6.5 m m5 metric m5 n 0.79 20.0 p 0.63 16.0 q 0.28 7.0 r 0.83 21.2 s 0.30 7.5 t 0.02 0.5 u 0.110 2.8 v 0.16 4.0
2 CM150DY-12NF dual igbtmod nf-series module 150 amperes/600 volts po werex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol CM150DY-12NF units j unction temperature t j ?0 to 150 c storage temperature t stg ?0 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 v olts collector current*** (dc, t c ' = 97 c) i c 150 amperes p eak collector current i cm 300* amperes emitter current** (t c = 25 c) i e 150 amperes p eak emitter current** i em 300* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 590 watts mounting torque, m5 main terminal 30 in-lb mounting torque, m6 mounting 40 in-lb w eight 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 5.0 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25 c 1.7 2.2 volts i c = 150a, v ge = 15v, t j = 125 c 1.7 volts t otal gate charge q g v cc = 300v, i c = 150a, v ge = 15v 600 nc emitter-collector voltage** v ec i e = 150a, v ge = 0v 2.6 volts dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies 23nf output capacitance c oes v ce = 10v, v ge = 0v 2.8 nf reverse transfer capacitance c res 0.9 nf inductive turn-on delay time t d(on) 120 ns load rise time t r v cc = 300v, i c = 150a, 100 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 4.2 ? , 300 ns time fall time t f inductive load 300 ns diode reverse recovery time** t rr switching operation, 150 ns diode reverse recovery charge** q rr i e = 150a 2.5 c *pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) r ating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi) . *** tc' measured point is just under the chips. if this value is used, rth(f-a) should be measured just under the chips
3 CM150DY-12NF dual igbtmoda nf-series module 150 amperes/600 volts po werex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) qp er igbt 1/2 module, t c reference ? ? 0.21 c/w p oint per outline drawing thermal resistance, junction to case r th(j-c) dp er fwdi 1/2 module, t c reference ? ? 0.47 c/w p oint per outline drawing thermal resistance, junction to case r th(j-c) 'q per igbt 1/2 module, ? ? 0.16 c/w t c reference point under chips contact thermal resistance r th(c-f) p er 1/2 module, thermal grease applied ? 0.07 ? c/w external gate resistance r g 4.2 ? 42 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 01 34 25 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6810 14 12 16 18 20 8 6 4 2 0 t j = 25?c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 4 3 0 50 150 2 1 0 300 200 250 v ge = 15v t j = 25?c t j = 125?c t j = 25?c t j = 125?c v ge = 0v c ies c oes c res i c = 300a i c = 150a i c = 60a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 02 46 810 50 0 v ge = 20v 10 11 12 15 13 9 8 t j = 25 o c 100 150 300 200 250 100 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 4.2 t j = 125?c inductive load t f 10 3
4 CM150DY-12NF dual igbtmoda nf-series module 150 amperes/600 volts po werex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th (normalized value) single pulse t c = 25?c per unit base = r th(j-c) = 0.21?c/w (igbt) r th(j-c) = 0.47?c/w (fwdi) normalized transient thermal impedance, z th( j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 200 400 600 1000 800 v cc = 300v emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) v cc = 300v v ge = 15v r g = 4.2 t j = 25?c inductive load v cc = 200v i c = 150a 10 3 collector current, i c , (amperes) switching loss, e sw( on) , e sw( off) , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 v cc = 300v v ge = 15v r g = 4.2 t j = 125?c inductive load c snubber at bus v cc = 300v v ge = 15v i c = 150a t j = 125?c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) gate resistance, r g , ( ) switching loss, e sw( on) , e sw( off) , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 10 3 switching loss vs. gate resistance (typical) e sw(on) e sw(off) e sw(on) e sw(off) i rr t rr
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